symbol v ds v gs continuous drain current g parameter t c =25c t c =100c 25 18 absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage 30 maximum units a i d AOD480 v ds (v) = 30v i d = 25a (v gs = 10v) r ds(on) <23 m w (v gs = 10v) r ds(on) <33 m w (v gs = 4.5v) the AOD480 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. g d s i dm i ar e ar t j , t stg symbol typ max 16.7 25 40 50 r q jc 4.5 7 current power dissipation a w maximum junction-to-case b steady-state c/w thermal characteristics parameter units c/w -55 to 175 t c =100c t c =100c repetitive avalanche energy l=0.1mh c maximum junction-to-ambient a c/w maximum junction-to-ambient a t 10s r q ja 2.5 18 64 pulsed drain current c t a =25c p dsm steady-state power dissipation b 7 a mj w junction and storage temperature range avalanche current c 12 t c =25c 1.6 a p d c 21 11 t a =70c i d www.freescale.net.cn 1/6 30v n-channel mosfet general description features
symbol min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 18.5 23 t j =125c 26 32 25.4 33 m w g fs 20 s v sd 0.75 1 v i s 3.2 a c iss 373 448 pf c oss 67 pf c rss 41 pf r g 2 2.8 w q g (10v) 5.7 7.1 8.6 nc q g (4.5v) 2.7 3.5 4.2 nc q gs 1.2 nc q gd 1.6 nc t d(on) 4.3 ns drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 20v m w v gs =4.5v, i d =8a i s =1a,v gs =0v v ds =5v, i d =20a maximum body-diode continuous current total gate charge gate source charge turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =20a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz input capacitance output capacitance t d(on) 4.3 ns t r 2.8 ns t d(off) 15.8 ns t f 3 ns t rr 8.4 10.5 12.6 ns q rr 3.6 4.5 5.4 nc body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ m s i f =20a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. g. the maximum current is limited by package. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25 c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev3: may. 2011 www.freescale.net.cn 2/6 AOD480 30v n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 10v 0 4 8 12 16 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 15 20 25 30 35 0 5 10 15 20 r ds(on) (m w w w w ) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v gs =4.5v 25 c 125 c v ds =5v v gs =4.5v v gs =10v 6v i d =20a i d =8a this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 15 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =20a 25 c 125 c www.freescale.net.cn 3/6 AOD480 30v n-channel mosfet
typical electrical and thermal characteristics 1.4 494 593 692 830 193 18 59 142 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) c oss c rss v ds =15v i d =20a t j(max) =175 c t c =25 c 0.1 1 10 100 0.1 1 10 100 i d (amps) v ds (volts) 10 m s 100 m s 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 142 30 0 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =7 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note f) www.freescale.net.cn 4/6 AOD480 30v n-channel mosfet
typical electrical and thermal characteristics 1 10 100 1 10 100 1000 i d (a), peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability 0 10 20 30 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note b) 0 10 20 30 0 25 50 75 100 125 150 175 current rating i d (a) 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 power (w) t a =25 c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal impe dance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 0 25 50 75 100 125 150 175 t case ( c) figure 14: current de-rating (note b) 0 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) www.freescale.net.cn 5/6 AOD480 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i vds ar dss 2 e = 1/2 li ar ar www.freescale.net.cn 6/6 AOD480 30v n-channel mosfet
|
